FS150R12N2T7BPSA1 | Infineon Technologies | - | IGBT Modules LOW POWER ECONO |
DataSheet
|
358.04 | |||
FP150R12N3T7BPSA1 | Infineon Technologies | - | IGBT Modules LOW POWER ECONO |
DataSheet
|
571.2 | |||
F3L200R07W2S5FPB56BPSA1 | Infineon Technologies | - | IGBT Modules LOW POWER EASY | 199.78 | ||||
F3L200R07W2S5FPB55BPSA1 | Infineon Technologies | - | IGBT Modules LOW POWER EASY | 199.78 | ||||
SCTH90N65G2V-7 | STMicroelectronics | - | H2PAK-7 | MOSFET Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ TJ = 25C) | 64.36 | |||
IPDD60R055CFD7XTMA1 | Infineon Technologies | - | HDSOP-10 | MOSFET HIGH POWER_NEW |
DataSheet
|
18 | ||
IPWS65R035CFD7AXKSA1 | Infineon Technologies | - | MOSFET AUTOMOTIVE |
DataSheet
|
38.74 | |||
IPP65R041CFD7XKSA1 | Infineon Technologies | - | MOSFET HIGH POWER_NEW |
DataSheet
|
23.92 | |||
IPT60R075CFD7XTMA1 | Infineon Technologies | - | HSOF-8 | MOSFET HIGH POWER_NEW | 15.2 | |||
ISZ019N03L5SATMA1 | Infineon Technologies | - | TDSON-8 | MOSFET TRENCH <= 40V |
DataSheet
|
3.18 | ||
MRFX035HR5 | NXP Semiconductors | - | NI-360H-2SB | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V |
DataSheet
|
149.78 | ||
MSC015SMA070B | Microchip / Microsemi | - | TO-247-3 | MOSFET UNRLS, FG, SIC MOSFET, TO-247 |
DataSheet
|
62.86 | ||
VN0106N3-G | Microchip Technology | - | TO-92-3 | MOSFET 60V 3Ohm |
DataSheet
|
1.5 | ||
BFR843EL3E6327XTSA1 | Infineon Technologies | - | TSLP-3 | RF Bipolar Transistors RF BIP TRANSISTORS | 1.42 | |||
FP35R12KT4B15BPSA1 | Infineon Technologies | - | IGBT Modules LOW POWER ECONO | 181.28 | ||||
IPP65R099CFD7AAKSA1 | Infineon Technologies | - | MOSFET AUTOMOTIVE |
DataSheet
|
14.7 | |||
FF600R07ME4B11BPSA1 | Infineon Technologies | - | IGBT Modules MEDIUM POWER ECONO |
DataSheet
|
363.14 | |||
IPP65R190CFD7XKSA1 | Infineon Technologies | - | TO-220-3 | MOSFET HIGH POWER_NEW |
DataSheet
|
6.92 | ||
BSC004NE2LS5ATMA1 | Infineon Technologies | - | TDSON-8-FL | MOSFET TRENCH <= 40V |
DataSheet
|
6.02 | ||
MRFX1K80GNR5 | NXP Semiconductors | - | OM-1230G-4L | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V | 486.08 | |||
FP10R12W1T7BOMA1 | Infineon Technologies | - | IGBT Modules LOW POWER EASY |
DataSheet
|
74.74 | |||
FS450R17OP4BPSA1 | Infineon Technologies | - | IGBT Modules MEDIUM POWER ECONO | 1604.6 | ||||
FZ1200R12HE4PHPSA1 | Infineon Technologies | - | IGBT Transistors PP IHM I XHP 1 7KV | 1631.08 | ||||
AIKB50N65DF5ATMA1 | Infineon Technologies | - | TO-263-3 | IGBT Transistors DISCRETE SWITCHES |
DataSheet
|
13.74 | ||
MRF300BN | NXP Semiconductors | - | TO-247-3 | RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V |
DataSheet
|
97.42 |